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Nanofabrication : principles, capabilities and limits / Zheng Cui
Resource type: Ressourcentyp: Buch (Online)Book (Online)Language: English Series: SpringerLink BücherPublisher: New York : Springer Science + Business, 2008Description: Online-RessourceISBN:- 9780387755779
- 0387755764
- 9780387755762
- 620.115
- 620.5
- T174.7 TA418.9.N35
- T174.7
Contents:
Summary: Presents a description at the introductory level on most technologies that have been developed which are capable of making structures below 100nm. This book introduces principles of various technologies. It describes the capabilities of each technology in making sub-100nm structuresPPN: PPN: 1647667283Package identifier: Produktsigel: ZDB-1-SCM | ZDB-2-CMS
Nanofabrication; Preface; Contents; Introduction; 1.1 Nanotechnology; 1.2 Nanofabrication; 1.3 Purpose of the Book; References; Nanofabrication by Photons; 2.1 Introduction; 2.2 Principle of Optical Projection Lithography; 2.3 Optical Lithography at Shorter Wavelengths; 2.3.1 Deep UV; 2.3.2 Extreme UV; 2.3.2.1 EUV Source; 2.3.2.2 EUV Optics; 2.3.2.3 EUV Mask; 2.3.2.4 EUV Resists; 2.3.3 X-ray; 2.4 Optical Lithography at High NA; 2.5 Optical Lithography at Low k1 Factor; 2.5.1 Off-Axis Illumination (OAI); 2.5.2 Phase-Shifting Mask (PSM); 2.5.3 Optical Proximity Correction (OPC)
2.5.4 Photoresists2.5.4.1 Sensitivity; 2.5.4.2 Contrast; 2.5.4.3 Line Edge Roughness (LER); 2.5.4.4 Etch Resistance; 2.5.5 Design for Manufacturing (DFM); 2.5.6 Double Processing; 2.6 Near-Field Optical Lithography; 2.7 Interferometric Optical Lithography; 2.8 Maskless Optical Lithography; References; Nanofabrication by Charged Beams; 3.1 Introduction; 3.2 Focusing Charged Particle Beam; 3.2.1 Charged Particle Optics; 3.2.2 Sources; 3.2.2.1 Electron Sources; 3.2.2.2 Liquid Metal Ion Sources; 3.2.3 Aberrations; 3.3 Scattering and Proximity Effect; 3.3.1 Electron Scattering
3.3.2 Proximity Effect and Correction3.3.3 Effect of Secondary Electrons; 3.3.4 Low-Energy E-Beam Lithography; 3.3.5 Ion Scattering; 3.4 Resist Materials and Processes; 3.4.1 Sensitivity of Resist Materials; 3.4.2 Contrast of Resist Materials; 3.4.3 Resolution Enhancement Processes; 3.5 Ion Sputtering and Redeposition; 3.6 Charged Particles Projection Lithography; References; Nanofabrication by Scanning Probes; 4.1 Introduction; 4.2 Principles of SPMs; 4.3 Exposure of Resists; 4.3.1 Field Electron Emission; 4.3.2 Exposure of Resist by STM; 4.3.3 Exposure of Resist by NSOM
4.4 Local Oxidation Lithography4.5 Additive Nanofabrication; 4.5.1 Field-Induced Deposition; 4.5.2 Dip-Pen Nanolithography; 4.6 Subtractive Nanofabrication; 4.6.1 Electrochemical Etching; 4.6.2 Field-Induced Decomposition; 4.6.3 Thermomechanical Indentation; 4.6.4 Mechanical Scratching; 4.7 High-Throughput SPL; References; Nanofabrication by Replication; 5.1 Introduction; 5.2 Thermal Press Nanoimprint; 5.2.1 Nanoimprint Stamps; 5.2.2 Nanoimprint Polymers; 5.2.3 Demolding; 5.2.4 Alignment; 5.3 Room Temperature Nanoimprint; 5.4 UV-Cured Nanoimprint; 5.4.1 Transparent Stamps
5.4.2 UV-Curable Polymers5.4.3 Step-and-Flash Imprint Lithography; 5.4.4 Alignment through Transparent Stamps; 5.4.5 Combined Nanoimprint and Photolithography; 5.5 Reverse Nanoimprint; 5.6 Soft Lithography; 5.6.1 Soft Stamps; 5.6.2 Microcontact Printing; 5.6.3 Replication by Capillary Force; References; Nanoscale Pattern Transfer; 6.1 Introduction; 6.2 Additive Pattern Transfer; 6.2.1 Thin Film Deposition; 6.2.1.1 Long-Throw Deposition; 6.2.1.2 Collimated Deposition; 6.2.2 Pattern Transfer by Lift-off; 6.2.3 Pattern Transfer by Plating; 6.2.4 Damascene Process
6.2.5 Pattern Transfer by Stencil Mask
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