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Nanotechnology for Electronic Materials and Devices / edited by Anatoli Korkin, Evgeni Gusev, Jan Labanowski, Serge Luryi
Contributor(s): Resource type: Ressourcentyp: Buch (Online)Book (Online)Language: English Series: Nanostructure Science and Technology | SpringerLink BücherPublisher: Boston, MA : Springer-Verlag US, 2007Description: Online-Ressource (VII, 367 p, digital)ISBN:- 9780387499659
- 620.115
- 621.381
- T174.7 TA418.9.N35
- T174.7
- TA418.9.N35
Contents:
Summary: Quickly becoming the hottest topic of the new millennium (2.4 billion dollars funding in US alone)Current status and future trends of micro and nanoelectronics researchWritten by leading experts in the corresponding research areasExcellent tutorial for graduate students and reference for 'gurus'Provides a broad overlook and fundamentals of nanoscience and nanotechnology from chemistry to electronic devicesSummary: This book is designed as an introduction for graduate students, engineers, and researchers who want to understand the current status and future trends of micro- and nano-electronic materials and devices. It also serves as an essential reference for nanotechnology "gurus" who need to keep abreast of the latest directions and challenges in microelectronic technology. The viewpoints presented within the book can help to foster further research and cross-disciplinary interactions required to surmount the barriers facing future generations of technology design. TOC:A Hybrid Route from CMOS to Nano and Molecular Electronics.- From SOI Basics to Nano-Size MOSFETs.- Strategies of Nanoscale Semiconductor Lasers.- Silicon Nanocrystal Based Memory Devices for NVM and DRAM Applications.- Novel Dielectric Materials for Future Transistor Generations.- Scanning Force Microscopies for Imaging and Characterisation of Nanostructured Materials.- Intrinsic Parameter Fluctuations in Nano-CMOS Devices: Every Atom Counts.- Lattice Polarons and Switching in Molecular Nano-wires and Quantum Dots.PPN: PPN: 1649398255Package identifier: Produktsigel: ZDB-1-SCM | ZDB-2-CMS
Title Page; Copyright Page; Preface; Table of contents; 1 A Hybrid Route from CMOS to Nano and Molecular Electronics; 1.1. INTRODUCTION; 1.2. MICROELECTRONICS TOWARD THE NANO ERA; 1.2.1. Moore's Laws and MOSFET Paradigm; 1.2.2. The Menu of the Silicon Technology; 1.2.2.1. Photolithography; 1.2.2.2. Oxidation; 1.2.2.3. Doping; 1.2.2.4. Etching; 1.2.2.5. Deposition; 1.2.3. The Historical Evolution of Microelectronics; 1.2.4. Trying to Sustain the Validity of the First Moore Law; 1.2.5. Theoretical Limits of Computation; 1.3. MOLECULAR ELECTRONICS
1.3.1. Molecules of Potential Interest for Molecular Electronics1.3.1.1. Molecules Involving Internal Redox; 1.3.1.2. Molecules Involving External Redox; 1.3.2. Molecular Electronics Ex Novo; 1.3.2.1. Supramolecular Systems as Simple Solid-State Devices; 1.3.2.2. A Molecular Random Access Memory; 1.3.3. Hybrid Routes to Molecular Electronics; 1.3.3.1. An Opportunistic Approach; 1.3.3.2. A Dedicated Approach; 1.4. IMPLEMENTATION OF THE DEDICATED HYBRID ROUTE; 1.4.1. Preparing the Host; 1.4.1.1. The Spacer Patterning Technology; 1.4.1.2. The Multispacer Patterning Technology
1.4.2. Inserting the Guest1.4.3. Addressable Nanowires and the Nano-to-Lϊtho Link; 1.4.4. Circuit and Process Architecture; 1.5. READING AND WRITING MOLECULES AS QUANTUM PROCESSES; 1.5.1. Conventional Flash Memory Devices; 1.5.2. A Possible Molecular Flash Device; 1.5.3. What Do We Measure Measuring Static 1 - V Characteristics of Single Molecules?; 1.6. DESCRIBING SYSTEMS ON THE NANOMETRE LENGTH SCALE: BOTTOM-UP, TOP-DOWN, OR ANYTHING ELSE?; 1.6.1. The Bottom-up Description of Nature; 1.6.2. The Bottom-up Construction of Physical Theories; 1.6.3. Anything Else?
1.7. CONCLUSIONS: PRELIMINARY, TENTATIVE, PROVISIONALREFERENCES; 2 From SOI Basics to Nano-Size MOSFETs; 2.1. INTRODUCTION; 2.2. PRINCIPLES OF SOl TECHNOLOGY; 2.3. SOl WAFER TECHNOLOGIES; 2.3.1. Wafer Bonding; 2.3.2. Unibond; 2.3.3. Eltran; 2.3.4. SIMOX; 2.3.5. Other SOl Materials; 2.4. SOl MOSFETS; 2.4.1. Fully Depleted SOI MOSFETs; 2.4.1.1. Threshold Voltage; 2.4.1.2. Subthreshold Slope; 2.4.1.3. Transconductance; 2.4.1.4. Volume Inversion; 2.4.1.5. Defect Coupling; 2.4.1.6. Metastable Dip; 2.4.2. Partially Depleted SOl MOSFETs; 2.4.2.1. Kink Effect; 2.4.2.2. Hysteresis and Latch
2.4.2.3. Parasitic Bipolar Transistor2.4.2.4. Transient and History Effects; 2.4.3 . Transition from Partial to Full Depletion; 2.5. ELECTRICAL CHARACTERIZATION TECHNIQUES FOR SOI; 2.5.1. Wafer Characterization: Ψ-MOSFET; 2.5.2. MOSFET Characteristics; 2.5.3. SIS and MOS Capacitance; 2.5.4. Charge Pumping Technique; 2.5.5. Low-Frequency Noise; 2.5.6. Drain Current Transients; 2.6. DIMENSIONAL EFFECTS IN SOl MOSFETs; 2.6.1. Short Channels; 2.6.2. Narrow Channels; 2.6.3. Channel Thickness; 2.6.3.1. Supercoupling; 2.6.3.2. Mobility Issues; 2.6.4. Ultrathin Gate Dielectric
2.6.5. Innovative Buried Insulators
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