Emerging Resistive Switching Memories / by Jianyong Ouyang

Von:

Ouyang, Jianyong [aut]

Resource type: Ressourcentyp: Buch (Online)Buch (Online)Sprache: Englisch Reihen: SpringerBriefs in Materials | SpringerLink Bücher | Springer eBook Collection Chemistry and Materials ScienceVerlag: Cham : Springer, 2016Beschreibung: Online-Ressource (VIII, 93 p. 73 illus., 41 illus. in color, online resource)ISBN:

9783319315720

Schlagwörter:

Andere physische Formen: 9783319315706 | Druckausg.: 978-3-319-31570-6 | Printed edition: 9783319315706 LOC-Klassifikation:

T174.7 TA418.9.N35
T174.7
TA418.9.N35

DOI: DOI: 10.1007/978-3-319-31572-0Online-Ressourcen:

Zusammenfassung: This brief describes how non-volatile change of the resistance , due to the application of electric voltage allows for fabrication of novel digital memory devices. The author explains the physics of the devices and provides a concrete description of the materials involved as well as the fundamental properties of the technology. He details how charge trapping, charge transfer and conductive filament formation effect resistive switching memory devicesZusammenfassung: Introduction to history of memory devices and the present memory devices -- Introduction of resistive switches memory devices with nanoparticles -- Structure, fabrication and operation of devices with a triple-layer structure sandwiched between two electrode -- Structure, fabrication and operation of devices with a single layer structure sandwiched between two electrode -- Resistive switching devices exploiting the charge transfer between metal electrode and metal nanoparticles -- Mechanisms for resistive switches -- Application of the resistive switching devices with nanoparticlesPPN: PPN: 165846477XPackage identifier: Produktsigel: ZDB-2-CMS | ZDB-2-SEB | ZDB-2-SXC

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