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Defects and Synchrotron X-Ray Topography in Silicone-Carbide Based Devices : Special topic volume with invited peer-reviewed papers only / edited by Juraj Marek, Gregor Pobegen and Ulrike Grossner

Contributor(s): Resource type: Ressourcentyp: Buch (Online)Book (Online)Language: English Series: Defect and Diffusion Forum ; Vol. 426Publisher: Switzerland : Trans Tech Publications Ltd, 2023Description: 1 Online-RessourceISBN:
  • 9783036413327
  • 3036413324
Online resources: Summary: The presented special edition is devoted to the latest research in semiconductor materials and devices on silicon carbide and the design and research of machines and equipment. This issue will be helpful to specialists engaged in the design and production of power electronics and to mechanical engineers. Crystal Structure, Semiconductor, Silicon Carbide, Point Defects, Surface Defects, Dislocations, Crystalline Defect, Epilayer, Wafer, Defect Inspection, Synchrotron X-ray Topography, Heat Transfer, Mass Transfer, Friction Stir Welding, Polymer, Landfill Gas, Spark Ignition Engine, Aircraft Fuel Dump Materials Science, Mechanical Engineering, ElectronicsPPN: PPN: 1882624785Package identifier: Produktsigel: ZDB-4-NLEBK | BSZ-4-NLEBK-KAUB
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