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Ferroelectric thin films : basic properties and device physics for memory applications / Masanori Okuyama ... (ed.)

Contributor(s): Resource type: Ressourcentyp: BuchBookPublisher number: 11308157Language: English Series: Topics in applied physics ; 98Publisher: Berlin ; Heidelberg [u.a.] : Springer, 2005Description: XIII, 244 S. : Ill., graph. Darst. ; 235 mm x 155 mmISBN:
  • 3540241639
Subject(s): Additional physical formats: Erscheint auch als: Ferroelectric Thin Films. Online-Ausgabe Berlin, Heidelberg : Springer Berlin Heidelberg, 2005. Online-Ressource (XIV, 244 p. 172 illus. Also available online, online resource)DDC classification:
  • 621.39732
  • 530
  • 621.39/732
  • 530
RVK: RVK: UP 4700 | UD 9450LOC classification:
  • TA418.9.T45
Summary: Ferroelectric thin films continue to attract much attention due to their developing applications in memory devices, FeRAM, infrared sensors, piezoelectric sensors and actuators. This book, aimed at students, researchers and developers gives detailed information about the basic properties of these materials and the associated device physics. All authors are acknowledged experts in the field. TOC:Theoretical Aspects of Phase Transitions in Ferroelectric Thin Films.- Chemical Solution Deposition of Layered-Structured Ferroelectric Thin Films.- PB-Based Ferroelectric Thin Films Prepared by MOCVD.- Spontaneous Polarization and Crystal Orientation Control of MOCVD PZT and Bi4Ti3O12-Based Films.- Rhombohedral PZT Thin Films Prepared by Sputtering.- Scanning Nonlinear Dielectric Microscope.- Analysis of Ferroelectricity and Enhanced Piezoelectricity near Morphotropic Phase Boundary.- Correlation between Domain Structures in Dielectric Properties in Single Crystals of Ferroelectric Solid Solutions.- Relaxor Behaviors in Perovskite-Type Dielectric Compounds.- Artificial Control of Ordered/Disordered State of B-Site Ions in Ba(Zr,Ti)O3 by a Superlattice Technique.- Physics of Ferroelectric Interface: An Attempt to Nano-Ferrolectric Physics.- Preparation and Property of Ferroelectic-Insulator-Semiconductor Junction Using YMNO3 Thin Film.- Improvement of Memory Retention in Metal-Ferroelectric-Insulator-Semiconductor (MFIS) StructureCall number: Grundsignatur: 2005 A 4213PPN: PPN: 473317281
Holdings
Item type Home library Collection Shelving location Call number Status Barcode
Freihandbestand Präsenznutzung Fachbibliothek Physik phys 8.51 Bibliothek / frei aufgestellt 2005 A 4213 Not for loan 47765292090
Total holds: 0
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