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Transparent oxide electronics : from materials to devices / Pedro Barquinha ...

Contributor(s): Resource type: Ressourcentyp: Buch (Online)Book (Online)Language: English Publisher: Chichester, West Sussex : Wiley, 2012Edition: Online-AusgDescription: Online-Ressource (1 online resource (xvi, 295 p., [24] p. of plates)) : ill. (some col.)ISBN:
  • 9781280589997
  • 128058999X
  • 9781119967002
  • 9780470683736
Subject(s): Additional physical formats: 9781119967002 | 9781119966999 | 9781119967743 | 9781119967750 | 9780470683736 | Erscheint auch als: 9780470683736 Druck-Ausgabe | Erscheint auch als: Transparent Electronics : From Materials to Devices Druck-AusgabeDDC classification:
  • 621.38152
  • 621.3815/2 23
RVK: RVK: ZN 4800LOC classification:
  • TK7871.15.F5
Online resources:
Contents:
N-type transparent semiconducting oxidesP-type transparent conductors and semiconductors -- Gate dielectrics on oxide electronics -- The (r)evolution of thin-film transistors (TFTs) -- Electronics with and on paper -- A glance at current and upcoming applications.
Transparent Oxide Electronics: From Materials to Devices; Contents; Preface; Acknowledgments; 1 Introduction; 1.1 Oxides and Transparent Electronics: Fundamental Research or Heading Towards Commercial Products?; 1.2 The Need for Transparent (Semi)Conductors; 1.3 Reaching Full Transparency: Dielectrics and Substrates; References; 2 N-type Transparent Semiconducting Oxides; 2.1 Introduction: Binary and Multicomponent Oxides; 2.1.1 Binary Compounds: the Examples of Zinc Oxide and Indium Oxide
2.1.2 Ternary and Quaternary Compounds: the Examples of Indium-Zinc Oxide and Gallium-Indium-Zinc Oxide2.2 Sputtered n-TSOs: Gallium-Indium-Zinc Oxide System; 2.2.1 Dependence of the Growth Rate on Oxygen Content in the Ar+O2 Mixture and Target Composition; 2.2.2 Structural and Morphological Properties; 2.2.3 Electrical Properties; 2.2.4 Optical Properties; 2.3 Sputtered n-TSOs: Gallium-Zinc-Tin Oxide System; 2.4 Solution-Processed n-TSOs; 2.4.1 ZTO by Spray-pyrolysis; 2.4.2 ZTO by Sol-gel Spin-coating; 2.4.3 GIZO Sol-gel by Spin-coating; References
3 P-type Transparent Conductors and Semiconductors3.1 Introduction; 3.2 P-type Transparent Conductive Oxides; 3.3 Thin Film Copper Oxide Semiconductors; 3.3.1 Role of Oxygen in the Structure, Electrical and Optical Performance; 3.4 Thin Film Tin Oxide Semiconductors; 3.4.1 Structure, Composition and Morphology of Tin Oxide Films; 3.4.2 Electrical and Optical Properties of Tin Oxide Films; References; 4 Gate Dielectrics in Oxide Electronics; 4.1 Introduction; 4.2 High-k Dielectrics: Why Not?; 4.3 Requirements; 4.4 High-k Dielectrics Deposition; 4.5 Sputtered High-k Dielectrics in Oxide TFTs
4.6 Hafnium Oxide4.6.1 Multicomponent Co-sputtered HfO2 Based Dielectrics; 4.6.2 Multicomponent Dielectrics from Single Target; 4.7 Tantalum Oxide (Ta2O5); 4.7.1 Multicomponent Ta2O5 Based Dielectrics; 4.8 Multilayer Dielectrics; 4.9 High-k Dielectrics/Oxide Semiconductors Interface; 4.10 Summary; References; 5 The (R)evolution of Thin-Film Transistors (TFTs); 5.1 Introduction: Device Operation, History and Main Semiconductor Technologies; 5.1.1 Device Structure and Operation; 5.1.2 Brief History of TFTs; 5.1.3 Comparative Overview of Dominant TFT Technologies
5.2 Fabrication and Characterization of Oxide TFTs5.2.1 N-type GIZO TFTs by Physical Vapor Deposition; 5.2.2 N-type GZTO TFTs by Physical Vapor Deposition; 5.2.3 N-type Oxide TFTs by Solution Processing; 5.2.4 P-type Oxide TFTs by Physical Vapor Deposition; 5.2.5 N-type GIZO TFTs with Sputtered Dielectrics; References; 6 Electronics With and On Paper; 6.1 Introduction; 6.2 Paper in Electronics; 6.3 Paper Properties; 6.3.1 Structure, Morphology and Thermal Properties; 6.3.2 Electrical Properties of the Paper; 6.4 Resistivity Behaviour of Transparent Conductive Oxides Deposited on Paper
6.5 Paper Transistors
Summary: Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at low-cost, disposable and lightweight devices for the next generation of ergonomic and functional discrete devices. Chapters cover: Properties and applications of n-type oxide semiconductors P-type conductors and semiconductors, including copper oxide and tin monoxide Low-temperature processed dielectrics n and p-type thin film transistors (TFTs) - structure, physics and brief history Paper electronics - Paper transistors, paper memories and paper batteries Applications of oxide TFTs - transparent circuits, active matrices for displays and biosensors Written by a team of renowned world experts, Transparent Oxide Electronics: From Materials to Devices gives an overview of the world of transparent electronics, and showcases groundbreaking work on paper transistors.Summary: Intro -- Title Page -- Contents -- Preface -- Acknowledgments -- 1 Introduction -- 1.1 Oxides and Transparent Electronics: Fundamental Research or Heading Towards Commercial Products? -- 1.2 The Need for Transparent (Semi)Conductors -- 1.3 Reaching Full Transparency: Dielectrics and Substrates -- References -- 2 N-type Transparent Semiconducting Oxides -- 2.1 Introduction: Binary and Multicomponent Oxides -- 2.1.1 Binary Compounds: the Examples of Zinc Oxide and Indium Oxide -- 2.1.2 Ternary and Quaternary Compounds: the Examples of Indium-Zinc Oxide and Gallium-Indium-Zinc Oxide -- 2.2 Sputtered n-TSOs: Gallium-Indium-Zinc Oxide System -- 2.2.1 Dependence of the Growth Rate on Oxygen Content in the Ar+O2 Mixture and Target Composition -- 2.2.2 Structural and Morphological Properties -- 2.2.3 Electrical Properties -- 2.2.4 Optical Properties -- 2.3 Sputtered n-TSOs: Gallium-Zinc-Tin Oxide System -- 2.4 Solution-Processed n-TSOs -- 2.4.1 ZTO by Spray-pyrolysis -- 2.4.2 ZTO by Sol-gel Spin-coating -- 2.4.3 GIZO Sol-gel by Spin-coating -- References -- 3 P-type Transparent Conductors and Semiconductors -- 3.1 Introduction -- 3.2 P-type Transparent Conductive Oxides -- 3.3 Thin Film Copper Oxide Semiconductors -- 3.3.1 Role of Oxygen in the Structure, Electrical and Optical Performance -- 3.4 Thin Film Tin Oxide Semiconductors -- 3.4.1 Structure, Composition and Morphology of Tin Oxide Films -- 3.4.2 Electrical and Optical Properties of Tin Oxide Films -- References -- 4 Gate Dielectrics in Oxide Electronics -- 4.1 Introduction -- 4.2 High-k Dielectrics: Why Not? -- 4.3 Requirements -- 4.4 High-k Dielectrics Deposition -- 4.5 Sputtered High-k Dielectrics in Oxide TFTs -- 4.6 Hafnium Oxide -- 4.6.1 Multicomponent Co-sputtered HfO2 Based Dielectrics -- 4.6.2 Multicomponent Dielectrics from Single Target -- 4.7 Tantalum Oxide (Ta2O5).PPN: PPN: 80966870XPackage identifier: Produktsigel: ZDB-26-MYL | ZDB-30-PAD | ZDB-30-PQE
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