Random telegraph signals in semiconductor devices / Eddy Simoen (Imec, Leuven, Belgium), Cor Claeys (Imec, Leuven, Belgium)

By:

Simoen, Eddy [VerfasserIn]

Contributor(s):

Claeys, Cor L, 1951- [VerfasserIn]

Resource type: Ressourcentyp: Buch (Online)Book (Online)Language: English Series: IOP expanding physics | [IOP release 3]Publisher: Bristol, UK : IOP Publishing, [2016]Copyright date: © 2016Edition: Version: 20161001Description: 1 Online-Ressource (verschiedene Seitenzählungen) : IllustrationenISBN:

9780750312721
9780750312745
0750312726
0750312742

Subject(s):

Additional physical formats: 9780750312738 | Erscheint auch als: 9780750312738 Druck-AusgabeLOC classification:

TK7871.85

DOI: DOI: 10.1088/978-0-7503-1272-1Online resources:

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Additional physical formats: Also available in print.Summary: Following their first observation in 1984, random telegraph signals (RTSs) were initially a purely scientific tool to study fundamental aspects of defects in semiconductor devices. As semiconductor devices move to the nanoscale however, RTSs have become an issue of major concern to the semiconductor industry, both in development of current technology, such as memory devices and logic circuits, as well as in future semiconductor devices beyond the silicon roadmap, such as nanowire, TFET and carbon nanotube-based devices. It has become clear that the reliability of state-of-the-art and future CMOS technology nodes is dominated by RTS and single trap phenomena, and so its understanding is of vital importance for the modelling and simulation of the operation and the expected lifetime of CMOS devices and circuits. It is the aim of this book to provide a comprehensive and up-to-date review of one of the most challenging issues facing the semiconductor industry, from the fundamentals of RTSs to applied technologySummary: Preface -- 1. IntroductionSummary: 2. Random telegraph signal phenomenology -- 2.1. RTS time constants -- 2.2. RTS amplitude behavior -- 2.3. RTS in the gate current of a MOS device -- 2.4. RTS in the junction leakage current of a MOSFET -- 2.5. Multiple and complexSummary: 3. RTS modeling, simulation and parameter extraction -- 3.1. Time constant modeling and simulation -- 3.2. Extraction trap position from RTS time constants -- 3.3. RTS amplitude modeling -- 3.4. Atomistic numerical modeling of the RTS amplitude -- 3.5. Novel measurement and analysis methods -- 3.6. Ab initio modeling of RTS in gate dielectricsSummary: 4. Impact device processing and scaling on RTS -- 4.1. Processing effects on RTS -- 4.2. RTS in fin-type architectures -- 4.3. Nanometric scaling aspects of RTS -- 4.4. RTS in ‘beyond-silicon' devicesSummary: 5. Operational and reliability aspects of RTS -- 5.1. Switching AC operation of RTS -- 5.2. Impact of uniform and HC degradation -- 5.3. BTI and RTS: oxide trapping? -- 5.4. Statistical RTS measurement methods -- 5.5. Device and circuit simulation of dynamic variabilitySummary: 6. RTS in memory and imager circuits -- 6.1. RTS in flash and SRAM cells -- 6.2. RTS in DRAM and logic circuits -- 6.3. RTS in novel ReRAM and PCMs -- 6.4. RTS in CMOS imagers and CCDs -- 7. General conclusionsPPN: PPN: 872408582Package identifier: Produktsigel: ZDB-135-IAL | ZDB-135-IEP

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