Extreme-temperature and harsh-environment electronics : physics, technology and applications / Vinod Kumar Khanna, CSIR-Central Electronics Engineering Research Institute Pilani 333031 (Rajasthan), India

Von:

Khanna, Vinod Kumar, 1952- [VerfasserIn]

Resource type: Ressourcentyp: Buch (Online)Buch (Online)Sprache: Englisch Reihen: IOP expanding physics | [IOP release 3]Verlag: Bristol, UK : IOP Publishing, [2017]Copyright-Datum: © 2017Auflage: Version: 20170301Beschreibung: 1 Online-Ressource (verschiedene Seitenzählungen) : IllustrationenISBN:

9780750311557
9780750311571
075031155X
0750311576

Schlagwörter: Andere physische Formen: 9780750311564 | Erscheint auch als: 9780750311564 Druck-AusgabeDDC-Klassifikation:

621.381 23

DOI: DOI: 10.1088/978-0-7503-1155-7Online-Ressourcen:

Zugang im Netz des KIT

Zusammenfassung: Electronic devices and circuits are employed by a range of industries in testing conditions from extremes of high- or low-temperature, in chemically corrosive environments, subject to shock and vibration or exposure to radiation. This book describes the diverse measures necessary to make electronics capable of coping with such situations as well as to gainfully exploit any new phenomena that take place only under these conditionsZusammenfassung: Preface -- Acknowledgements -- About this book -- Author biography -- Abbreviations, acronyms, chemical symbols and mathematical notation -- Roman alphabet symbols -- Greek/other symbols -- 1. Introduction and overview --1.1 Reasons for moving away from normal practices in electronics -- 1.2 Organization of the book --1.3 Temperature effects -- 1.4. Harsh environment effects -- 1.5 Discussion and conclusionsZusammenfassung: 2. Operating electronics beyond conventional limits -- 2-1 Life-threatening temperature imbalances on Earth and other planets -- 2.2 Temperature disproportions for electronics -- 2.3 High-temperature electronics -- 2.4 Low-temperature electronics -- 2.5 The scope of extreme-temperature and harsh-environment electronics -- 2.4 Discussion and conclusionsZusammenfassung: Part I Extreme-temperature electronics -- 3. Temperature effects on semiconductors -- 3.1 Introduction -- 3.2 The energy bandgap -- 3.3 Intrinsic carrier concentration -- 3.4 Carrier saturation velocity -- 3.5 Electrical conductivity of semiconductors -- 3.6 Free carrier concentration in semiconductors -- 3.7 Incomplete ionization and carrier freeze-out -- 3.8 Different ionization regimes -- 3.9 Mobilities of charge carriers in semiconductors -- 3.10 Equations for mobility variation with temperature -- 3.11 Mobility in MOSFET inversion layers at low temperatures -- 3.12 Carrier lifetime -- 3.13 Wider bandgap semiconductors than silicon -- 3.14 Discussion and conclusionsZusammenfassung: 4. Temperature dependence of the electrical characteristics of silicon bipolar devices and circuits -- 4-1 Properties of silicon -- 4.2 Intrinsic temperature of silicon -- 4.3 Recapitulating single-crystal silicon wafer technology -- 4.4 Examining temperature effects on bipolar devices -- 4.5 Bipolar analog circuits in the 25 °C to 300 °C range -- 4.6 Bipolar digital circuits in the 25 °C to 340 °C range -- 4.7 Discussion and conclusionsZusammenfassung: 5. Temperature dependence of electrical characteristics of silicon MOS devices and circuits -- 5-1 Introduction -- 5.2 Threshold voltage of an n-channel enhancement mode MOSFET -- 5.3 On-resistance (RDS(ON)) of a double-diffused vertical MOSFET -- 5.4 Transconductance (gm) of a MOSFET -- 5.5 BVDSS and IDSS of a MOSFET -- 5.6 Zero temperature coefficient biasing point of MOSFET -- 5.7 Dynamic response of a MOSFET -- 5.8 MOS analog circuits in the 25 °C to 300 °C range -- 5.9 Digital CMOS circuits in −196°C to 270 °C rangeZusammenfassung: 6. The influence of temperature on the performance of silicon--germanium heterojunction bipolar transistors -- 6.1 Introduction -- 6.2 HBT fabrication -- 6.3 Current gain and forward transit time of Si/Si1−xGex HBT -- 6.4 Comparison between Si BJT and Si/SiGe HBTZusammenfassung: 7 The temperature-sustaining capability of gallium arsenide electronics-- 7.1 Introduction -- 7.2 The intrinsic temperature of GaAs -- 7.3 Growth of single-crystal gallium arsenide -- 7.4 Doping of GaAs -- 7.5 Ohmic contacts to GaAs -- 7.6 Schottky contacts to GaAs 7.7 Commercial GaAs device evaluation in the 25 °C to 400 °C temperature range -- 7.8 Structural innovations for restricting the leakage current of GaAs MESFET up to 300 °C -- 7.9 Won et al threshold voltage model for a GaAs MESFET -- 7.10 The high-temperature electronic technique for enhancing the performance of MESFETs up to 300 °C --7.11 The operation of GaAs complementary heterojunction FETs from 25 °C to 500 °C -- 7.12 GaAs bipolar transistor operation up to 400 °C -- 7.13 A GaAs-based HBT for applications up to 350 °C -- 7.14 AlxGaAs1−x/GaAs HBT -- 7.15 Discussion and conclusionsZusammenfassung: 8. Silicon carbide electronics for hot environments -- 8.1 Introduction -- 8.2 Intrinsic temperature of silicon carbide -- 8.3 Silicon carbide single-crystal growth -- 8.4 Doping of silicon carbide -- 8.5 Surface oxidation of silicon dioxide -- 8.6 Schottky and ohmic contacts to silicon carbide --8.7 SiC p--n diodes -- 8.8 SiC Schottky-barrier diodes --8.9 SiC JFETs -- 8.10 SiC bipolar junction transistors -- 8.11 SiC MOSFETs -- 8.12 Discussion and conclusionsZusammenfassung: 9. Gallium nitride electronics for very hot environments -- 9.1 Introduction -- 9.2 Intrinsic temperature of gallium nitride -- 9.3 Growth of the GaN epitaxial layer -- 9.4 Doping of GaN -- 9.5 Ohmic contacts to GaN -- 9.6 Schottky contacts to GaN -- 9.7 GaN MESFET model with hyperbolic tangent function -- 9.8 AlGaN/GaN HEMTs --9.9 InAlN/GaN HEMTs -- 9.10 Discussion and conclusionsZusammenfassung: 10. Diamond electronics for ultra-hot environments --10.1 Introduction -- 10.2 Intrinsic temperature of diamond -- 10.3 Synthesis of diamond -- 10.4 Doping of diamond -- 10.5 A diamond p--n junction diode -- 10.6 Diamond Schottky diode -- 10.7 Diamond BJT operating at <200 °C --10.8 Diamond MESFET -- 10.9 Diamond JFET -- 10.10 Diamond MISFET -- 10.11 Discussion and conclusionsZusammenfassung: 11. High-temperature passive components, interconnectionsand packaging -- 11.1 Introduction -- 11.2 High-temperature resistors -- 11.3 High-temperature capacitors -- 11.4 High-temperature magnetic cores and inductors -- 11.5 High-temperature metallization -- 11.6 High-temperature packaging -- 11.7 Discussion and conclusionsZusammenfassung: 12. Superconductive electronics for ultra-cool environments -- 12-1 Introduction -- 12.2 Superconductivity basics -- 12.3 Josephson junction -- 12.4 Inverse AC Josephson effect: Shapiro steps -- 12.5 Superconducting quantum interference devices -- 12.6 Rapid single flux quantum logic -- 12.7 Discussion and conclusionsZusammenfassung: 13. Superconductor-based microwave circuits operating at liquid-nitrogen temperatures -- 13.1 Introduction -- 13.2 Substrates for microwave circuits -- 13.3 HTS thin-film materials -- 13.4 Fabrication processes for HTS microwave circuits --13.5 Design and tuning approaches for HTS filters -- 13.6 Cryogenic packaging -- 13.7 HTS bandpass filters for mobile telecommunications -- 13.8 HTS JJ-based frequency down-converter --13.9 Discussion and conclusionsZusammenfassung: 14. High-temperature superconductor-based power delivery -- 14.1 Introduction -- 14.2 Conventional electrical power transmission -- 14.3 HTS wires -- 14.4 HTS cable designs -- 14.5 HTS fault current limiters -- 14.6 HTS transformers -- 14.7 Discussion and conclusionsZusammenfassung: Part II Harsh-environment electronics --15. Humidity and contamination effects on electronics -- 15.1 Introduction -- 15.2 Absolute and relative humidity -- 15.3 Relation between humidity, contamination and corrosion -- 15.4 Metals and alloys used in electronics -- 15.5 Humidity-triggered corrosion mechanisms -- 15.6 Discussion and conclusionsZusammenfassung: 16. Moisture and waterproof electronics -- 16.1 Introduction -- 16.2 Corrosion prevention by design -- 16.3 Parylene coatings -- 16.4 Superhydrophobic coatings -- 16.5 Volatile corrosion inhibitor coatings -- 1.6 Silicones -- 16.7 Discussion and conclusionsZusammenfassung: 17. Preventing chemical corrosion in electronics -- 17.1 Introduction -- 17.2 Sulfidic and oxidation corrosion from environmental gases -- 17.3 Electrolytic ion migration and galvanic coupling -- 17.4 Internal corrosion of integrated and printed circuit board circuits -- 17.5 Fretting corrosion -- 17.6 Tin whisker growth -- 17.7 Minimizing corrosion risks -- 17.8 Further protection methods -- 17.9 Hermetic packaging -- 17.10 Hermetic glass passivation of discrete high-voltage diodes -- 17.11 Discussion and conclusionsZusammenfassung: 18. Radiation effects on electronics -- 18.1 Introduction -- 18.2 Sources of radiation -- 18.3 Types of radiation effects -- 18.4 Total dose effects -- 18.5 Single event effects -- 18.6 Discussion and conclusionsZusammenfassung: 19. Radiation-hardened electronics -- 19.1 The meaning of 'radiation hardening' -- 19.2 Radiation hardening by process (RHBP) -- 19.3 Radiation hardening by design -- 19.4 Discussion and ConclusionsZusammenfassung: 20. Vibration-tolerant electronics -- 20.1 Vibration is omnipresent -- 20.2 Random and sinusoidal vibrations -- 20.3 Countering vibration effects -- 20.4 Passive and active vibration isolators-- 20.5 Theory of passive vibration isolation -- 20.6 Mechanical spring vibration isolators -- 20.7 Air-spring vibration isolators -- 20.8 Wire-rope isolators -- 20.9 Elastomeric isolators -- 20.10 Negative stiffness isolators -- 20.11 Active vibration isolators -- 20.12 Discussion and conclusionsPPN: PPN: 884017982Package identifier: Produktsigel: ZDB-135-ICP | ZDB-135-IAL | ZDB-135-IEP

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