Radiation effects in silicon carbide / by A.A. Lebedev (Ioffe Intitute, St. Petersburg, Russia)

By:

Lebedev, Alexander Alexandrovich [VerfasserIn]

Resource type: Ressourcentyp: Buch (Online)Book (Online)Language: English Series: Materials Research Foundations ; volume 6 (2017)Publisher: Millersville, PA, USA : Materials Research Forum LLC, [2017]Description: Online RessourceISBN:

9781945291111
9781945291111

Subject(s):

Additional physical formats: 9781945291104 | Erscheint auch als: Radiation effects in silicon carbide. Druck-Ausgabe Millersville, PA, USA : Materials Research Forum LLC, 2017. 161 SeitenLOC classification:

QD181.S6

Online resources:

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Summary: The book reviews the most interesting, in the author's opinion, publications concerned with radiation defects formed in 6H-, 4H-, and 3C-SiC under irradiation with electrons, neutrons, and some kinds of ions. At the beginning, the SiC electrical parameters making this material promising for application in modern electronics are discussedSummary: 2.8 Effect of the energy of recoil atoms on conductivity compensation in moderately doped n-Si and n-SiC under irradiation with MeV electrons and protons2.8.1 Introduction; 2.8.2 Generation of primary radiation defects under electron irradiation; 2.8.3 Formation of secondary radiation defects; 2.8.4 Comparison with experiment; Conclusion; References; 3; 3.1 Introduction; 3.2 Intrinsic defects in silicon carbide; 3.2.1 Centers in the lower half of the energy gap; 3.2.2 Defects in the upper half of the energy gap; 3.3 Radiation doping of SiC; 3.3.1 Electrons; 3.3.2 NeutronsSummary: 3.3.3 Alpha -- particles3.3.4 Protons; 3.3.5 Ion implantation; 3.5 Radiation -- stimulated photoluminescence in SiC; 3.5.1 "Defect" photoluminescence; 3.5.2 Restorian of SiC characteristics upon annealing; References; 4; 4.1 Change in parameters of SiC devices under irradiation; 4.1.1 Schottky diodes; 4.1.2 PN diodes; 4.1.3 SiC field -- effect transistors; 4.2 Possible transformation of the SiC polytype under irradiation; 4.2.1 Possible resons for the polytypism of SiC; 4.2.2 Selected experimental results; 4.3 Comparison of the radiation hardnesses of silicon and silicon carbideSummary: 4.3.1 Dependence of the radiation hardness on the functional purpose of a device4.3.2 Effect of temperature on the radiation hardness; 4.4 Conclusion; 4.5 Acknowledgments; References; keywords_editorsPPN: PPN: 885940792Package identifier: Produktsigel: ZDB-4-EBA | ZDB-4-NLEBK

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