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Compound Semiconductors : Physics, Technology, and Device Concepts / Ferdinand Scholz

By: Resource type: Ressourcentyp: Buch (Online)Book (Online)Language: English Publisher: Singapore : Pan Stanford Publishing, 2017Description: 1 Online-RessourceISBN:
  • 9781315229317
  • 9781351858717
Subject(s): Additional physical formats: 1351858726 | 9781351858724 | 9814774073 | 9789814774079 | 135185870X | 1351858718. | Erscheint auch als: Compound semiconductors. Druck-Ausgabe Singapore : Pan Stanford Publishing, 2018. xi, 294 SeitenLOC classification:
  • TK7871.99.C65
Online resources: Summary: ""Cover ""; ""Half Title ""; ""Title ""; ""Copyrights ""; ""Contents""; ""Preface ""; ""Chapter 1. Basics""; ""1.1 What Is a Semiconductor ""; ""1.2 Naive Band Diagram ""; ""1.3 Crystal Lattice: Basics ""; ""1.3.1 Crystal Planes, Miller Indices ""; ""1.3.2 Reciprocal Lattice ""; ""1.4 More Details about Band StructureSummary: ""1.4.1 Insert: Very Short Introduction to Quantum Mechanics """"1.4.2 Schr  ̈odinger Equation and Dispersion Relation ""; ""1.4.3 Short Summary Up to Now ""; ""1.5 Effective Mass ""; ""1.6 Movement of Carriers: Concept of Hole ""; ""1.7 Real Band StructuresSummary: ""1.8 Temperature Dependence of Lattice Constant and Band Gap """"1.9 Interaction with Light ""; ""1.10 Carrier Statistics ""; ""1.10.1 Density of States ""; ""1.10.2 Fermi Distribution ""; ""1.11 Defects in Semiconductors ""; ""Chapter 2. Introduction to Compound Semiconductors""; ""Chapter 3. Bulk Crystal Growth""; ""3.1 Czochralski MethodSummary: ""3.2 Bridgman Crystal Growth """"3.3 Wafer Preparation ""; ""Chapter 4. Epitaxial Methods""; ""4.1 Liquid Phase Epitaxy (LPE ""; ""4.1.1 Control of Growth Rate and Layer Thickness ""; ""4.1.2 LPE Equipment ""; ""4.2 Vapor Phase Epitaxy (VPE ""; ""4.3 Metalorganic Vapor Phase EpitaxySummary: ""4.4 Molecular Beam Epitaxy """"4.4.1 Equipment Details ""; ""4.5 Comparison of Epitaxial Methods ""; ""Chapter 5. Electrical Properties of Semiconductors/Electrical Characterization""; ""5.1 Carrier Concentration and Doping ""; ""5.2 Carrier Mobility ""; ""5.3 Measurement of Electrical Properties ""; ""5.3.1 Hall EffectPPN: PPN: 1003188303Package identifier: Produktsigel: ZDB-4-NLEBK
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