Resolution enhancement techniques in optical lithography / Alfred Kwok-Kit Wong

Von:

Wong, Alfred Kwok-Kit [aut]

Mitwirkende(r):

Resource type: Ressourcentyp: Buch (Online)Buch (Online)Sprache: Englisch Reihen: Tutorial texts in optical engineering ; 47Verlag: Bellingham, Wash. <1000 20th St. Bellingham WA 98225-6705 USA> : SPIE, 2001Beschreibung: 1 online resource (xvii, 214 p. : ill.)ISBN:

9780819478818
0819439959
9780819439956

Schlagwörter:

Andere physische Formen: 0819439959. | 9780819439956. | Erscheint auch als: Kein Titel Druck-AusgabeDDC-Klassifikation:

621.381531
621.3815/31 21

LOC-Klassifikation:

TK7874

DOI: DOI: 10.1117/3.401208Online-Ressourcen:

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Andere physische Formen: Also available in print version.Zusammenfassung: Ever-smaller IC devices are pushing the optical lithography envelope, increasing the importance of resolution enhancement techniques. This tutorial encompasses two decades of research. It discusses theoretical and practical aspects of commonly used techniques, including optical imaging and resolution, modified illumination, optical proximity correction, alternating and attenuating phase-shifting masks, selecting RETs, and second-generation RETs. Useful for students and practicing lithographersZusammenfassung: Foreword -- Preface-- List of symbols -- 1. Introduction. 1.1 Brief history of printing and lithography. 1.2 Optical lithography and integrated circuits. 1.3 Basics of optical lithography. 1.4 Requirements of microlithography. 1.5 Nonoptical microlithography techniques. 1.6 Current challenges of optical microlithography. 1.7 Three parameters affecting resolution. 1.8 Scope of discussion -- 2. Optical imaging and resolution. 2.1 Coherent imaging. 2.2 Mask spectrum. 2.3 Partially coherent imaging. 2.4 Complex degree of coherence. 2.5 Rayleigh's resolution limit. 2.6 Lithography resolution limit. 2.7 Quantification of image quality. -- 3. Modified illumination. 3.1 Partial coherence factor. 3.2 Off-axis illumination. 3.3 General guidelines -- 4. Optical proximity correction. 4.1 Image distortion. 4.2 Optical proximity correction approaches. 4.3 Numerical techniques. 4.4 Implementation. 4.5 Discussion -- 5. Alternating phase-shifting mask. 5.1 Principle. 5.2 Mask making process. 5.3 Issues. 5.4 Implementation. 5.5 Summary -- 6. Attenuated phase-shift mask. 6.1 Principle. 6.2 Mask making. 6.3 Discussion -- 7. Selecting appropriate RETs. 7.1 Critical levels. 7.2 Methodology. 7.3 Optimization results. 7.4 Summary and discussion -- 8 Second-Generation RETs. 8.1 Multiple exposure. 8.2 Pupil filtering. 8.3 Advanced illumination scheme. 8.4 Compensating process. 8.5 Mask and photoresist tone -- Concluding remarks -- k1 conversion charts -- Bibliography -- IndexPPN: PPN: 1018189297Package identifier: Produktsigel: ZDB-50-SPI

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