Studies of growth mechanisms and imperfections in silicon crystals grown by the floating zone method / by A. Lindegaard Andersen
Resource type: Ressourcentyp: GesamtaufnahmeSetLanguage: English Volumes: Show volumesPublisher: Copenhagen : Polyteknisk Forl., 19XX-Dissertation note: Zugl.: Kopenhagen, TH, Diss., 1967 PPN: PPN: 1116756994No physical items for this record